, d nc. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 npn high-voltage transistors BF469; bf471 features ? low feedback capacitance. applications ? intended for class-b video output stages in television receivers and for high-voltage if output stages. description npn transistors in a to-126; sot32 plastic package. pnp complements: bf470 and bf472. pinning pin 1 2 3 description emitter collector, connected to mounting base base top view mam254 fig.1 simplified outline (to-126; sot32) and symbol. quick reference data symbol vcbo vceo 'cm plot hfe cre fr parameter collector-base voltage BF469 bf471 collector-emitter voltage BF469 bf471 peak collector current total power dissipation dc current gain feedback capacitance transition frequency conditions open emitter open base tmb<114c lc = 25 ma; vce = 20 v ic = ic = 0; vce = 30 v; f = 1 mhz lc = 10ma; vce = 10v;f= 100mhz min. - - - -' - - 50 - 60 max. 250 300 250 300 100 1.8 - 1.8 - unit v v v v ma w pf mhz vi .semi-conductors reserves the righl lo change test conditions, parameter limits ;md package dimensions without notice information famished by nj somi-t onilucluri it believed to h? hulh accurate and reliahle .u the lime of going lt> press. however semi-i diijiwlors .umiimo im rcspuiisibility tor ;my errors .'r omissions jiscuvurcd in its use nj semi-<_ ondiiui >rs cncourases i?n riiir1; tn \crit\n ?liit.vhcem ire current h npn high-voltage transistors BF469; bf471 limiting values in accordance with the absolute maximum rating system (iec 134). symbol vcbo vceo vebo ic icm ibm plot tstg tj 'amb parameter collector-base voltage BF469 bf471 collector-emitter voltage BF469 bf471 emitter-base voltage collector current (dc) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature conditions open emitter open base open collector tmb<114c min. _ - - - - - - -65 - -65 max. 250 300 250 300 5 [50 100 50 1.8 +150 150 +150 unit v v v v v ma ma ma w c c c thermal characteristics symbol rth j-a rth j-mb parameter thermal resistance from junction to ambient thermal resistance from junction to mounting base conditions in free air; note 1 value 100 20 unit k/w k/w note 1. transistor mounted on a printed-circuit board, maximum lead length 4 mm, mounting pad for collector lead minimum 10 x 10 mm. characteristics tj = 25 c unless otherwise specified. symbol icbo iebo hfe vcesat cre fr parameter collector cut-off current emitter cut-off current dc current gain collector-emitter saturation voltage feedback capacitance transition frequency conditions ie = 0; vcb = 200 v ie = 0; vcb = 200 v; tj = 150 c lc = 0; veb = 5 v lc = 25 ma; vce = 20 v lc = 30 ma; ib = 5 ma lc = "c = 0; vce = 30 v; f = 1 mhz lc = 10 ma; vce = 10 v; f = 100 mhz min. - - - 50 - - 60 max. 10 10 50 - 0,6 1.8 - unit na ua na v pf mhz
npn high-voltage transistors BF469; bf471 package outline 2.7 max l dimensions in mm. (1) terminal dimensions within this zone are uncontrolled. 3.2 3.0 - 7.8 max - t 3.75 11.1 max -?-1.2 0.5 088_ max 15.3 min 2 3 , -j4 90 fig.2 to-126; sot32.
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